Abstract: The control algorithm for transistors of the bipolar asymmetric high frequency pulse former for magnetron sputtering systems is described. It allows to control frequency and pulse duration and prevent scheme operation in an unsafe mode. Experimentally shown that the use of a power supply based on the bipolar asymmetric pulse former increases film deposition rate and improves stability of reactive magnetron sputtering process.
Keywords: reactive magnetron sputtering, bipolar power supply
For citation:
Oskirko V. O., Semenov V. D., Pavlov A. P. The bipolar asymmetric pulse former for magnetron sputtering systems. Doklady Tomskogo gosudarstvennogo universiteta sistem upravleniya i radioelektroniki, 2015, no. 3(37), pp. 39–45.
Authors and copyright holders:
- Oskirko V. O.
- Semenov V. D. , Tomsk State University of Control Systems and Radioelectronics (Tomsk, Russia)
- Pavlov A. P.
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