Research of mechanisms of electrical conductivity of indium oxide films doped with tin

Abstract: The article presents data for the study of mechanisms of electrical conductivity of semiconductor films ITO, deposited by reactive magnetron sputtering on glass substrates, followed by high-temperature annealing and without it. It is found that the high temperature anneal of ITO film immediately after deposition increases the conductivity by increasing the crystallinity of the film and the full activation of the dopant. Both effects lead to a reduction in the surface resistivity of more than 20 times. It is found that the ITO films in the range of low temperatures largely manifested in Mott conduction mechanism.

Keywords: tco, ito, conductivity, activation energy, mott electrical conductivity