Abstract: The article describes pin-diode-based GaAs MMICs design results. MMICs are designed for using in frequency range (4–27) GHz, first of all in microwave measuring equipment. Measured characteristics show that produced MMICs can control a RF signal without adding significant insertion losses and reflections from device's input.
Keywords: monolithic microwave integrated circuit, gallium arsenide, pin diode, spdt switch, sp3t switch, attenuator, modulator, integrated bias network
For citation:
Guschin V. A., Yunusov I. V., Plotnikova A. Yu. Control MMICs based on GaAs. Doklady Tomskogo gosudarstvennogo universiteta sistem upravleniya i radioelektroniki, 2014, no. 3(33), pp. 70–74.
Authors and copyright holders:
- Guschin V. A.
- Yunusov I. V. , Tomsk State University of Control Systems and Radioelectronics (Tomsk, Russia)
- Plotnikova A. Yu.
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