Study of the characteristics of a distributed gain amplifier based on GaAs field-effect transistors

Authors: Gogolev N. I., Salih A., Bragin D. S., Dmitriev V. D.

Annotation: The distributed amplifier is an effective solution for creating broadband amplifiers in wireless communication, pulse and measurement technology. In this study, a distributed amplifica-tion amplifier based on GaAs field-effect transistors was deve- loped. The optimal number of amplification cells was deter-mined and a cascaded distributed amplification amplifier with a schematic diagram operating in the range of 2 to 20 GHz was designed. Preliminary calculations of the main characteristics of the amplifier were also performed, and based on them, a model of the distributed amplification amplifier was constructed, which was simulated in CAD. The changes in the gain and output power when compressed by 1 dB depending on the number of amplification cells were analyzed. The results of the study can be used in designing distributed amplification ampli-fiers for various systems in modern radio electronics.

Keywords: gallium arsenide (gaas), hemt, cascode, da, wideband