Study of the characteristics of a distributed gain amplifier based on GaAs field-effect transistors
DOI: 10.21293/1818-0442-2023-26-3-32-40
Abstract: The distributed amplifier is an effective solution for creating broadband amplifiers in wireless communication, pulse and measurement technology. In this study, a distributed amplifica-tion amplifier based on GaAs field-effect transistors was deve- loped. The optimal number of amplification cells was deter-mined and a cascaded distributed amplification amplifier with a schematic diagram operating in the range of 2 to 20 GHz was designed. Preliminary calculations of the main characteristics of the amplifier were also performed, and based on them, a model of the distributed amplification amplifier was constructed, which was simulated in CAD. The changes in the gain and output power when compressed by 1 dB depending on the number of amplification cells were analyzed. The results of the study can be used in designing distributed amplification ampli-fiers for various systems in modern radio electronics.
Keywords: gallium arsenide (GaAs), HEMT, cascode, DA, wideband
For citation:
Gogolev N. I., Salih A., Bragin D. S., Dmitriev V. D. Study of the characteristics of a distributed gain amplifier based on GaAs field-effect transistors. Doklady Tomskogo gosudarstvennogo universiteta sistem upravleniya i radioelektroniki, 2023, vol. 26, no. 3, pp. 32–40. DOI: 10.21293/1818-0442-2023-26-3-32-40
Authors and copyright holders:
- Gogolev N. I. , Tomsk State University of Control Systems and Radioelectronics (Tomsk, Russia)
- Salih A. , Tomsk State University of Control Systems and Radioelectronics (Tomsk, Russia)
- Bragin D. S. , Tomsk State University of Control Systems and Radioelectronics (Tomsk, Russia)
- Dmitriev V. D. , Tomsk State University of Control Systems and Radioelectronics (Tomsk, Russia)
- 1. Skhemotekhnika analogovyh elektronnyh ustrojstv [Analog Electronics Circuit Design]. Available at: https://wm-help.net/lib/b/book/1865579333/52 (Accessed: April 04, 2023) (in Russ.).
- 2. Husna Hamza K., Nirmal D. A review of GaN HEMT broadband power amplifiers. International Journal of Electronics and Communications, 2020, vol. 2, no. 116, pp. 1–11.
- 3. Ginzton E.L., Hewlett W.R., Jasberg J.H., Noe J.D. Distributed Amplification. Proceedings of the IRE, 1948, vol. 8, no. 36, pp. 956–969.
- 4. Arbabian A., Nikejad A.M. A Broadband Distributed Amplifier with Internal Feedback Providing 660 GHz GBW in 90 nm CMOS. IEEE International Solid-State Circuits Conference, 2008, pp. 196–197.
- 5. Tsai M.-D., Wang H., Kuan J.-F., Chang C.-S. A 70 GHz Cascaded Multi-Stage Distributed Amplifier in 90 nm CMOS Technology. International Solid-State Circuits Conference, 2008, pp. 402–403.
- 6. Chien L., Lu L. 40-Gb/s High-Gain Distributed Amplifiers with Cascaded Gain Stages in 0.18-μm CMOS. IEEE Journal of Solid-State Circuits, 2007, vol. 42, no. 12, pp. 2715–2725.
- 7. Jahanian A., Heydari P. A CMOS Distributed Amplifier with Distributed Active Input Balun Using GBW and Linearity Enhancing Techniques. IEEE Transactions on Microwave Theory and Techniques, 2012, vol. 60, no. 5, pp. 1331–1341.
- 8. Poluchart J. A 4–91-GHz Traveling-Wave Amplifier in a Standard 0.12-μm SOI CMOS Microprocessor Technology. IEEE Journal of Solid-State Circuits, 2004, vol. 39, no. 9, pp. 1445–1461.
- 9. Kim J., Buckwalter J.F. A 92 GHz Bandwidth Distributed Amplifier in a 45 nm SOI CMOS Technology. IEEE Microwave and Wireless Components Letters, 2011, vol. 21, no. 6, pp. 329–331.
- 10. Liu R., Wang T., Lu L., Wang H., Wang S., Chao C. An 80 GHz Travelling-Wave Amplifier in a 90 nm CMOS Technology. IEEE International Solid-State Circuits Conference, 2005, pp. 154–155.
- 11. Arbabian A., Nikejad A.M. Design of a CMOS Tapered Cascaded Multistage Distributed Amplifier. IEEE Transactions on Microwave Theory and Techniques, 2009, vol. 57, no. 4, pp. 938–947.
- 12. Yazdi A., Lin D., Heydari P. A 1.8 V Three-Stage 25 GHz 3 dB-BW Differential Non-Uniform Downsized Distributed Amplifier. IEEE International Solid-State Circuits Conference, 2005, pp. 156–157.
- 13. Fang K., Levy C.S., Buckwalter J.F. Supply-Scaling for Efficiency Enhancement in Distributed Power Amplifiers. IEEE Journal of Solid-State Circuits, 2016, vol. 51, no. 9, pp. 1994–2005.
- 14. Afshari E., Bhat H., Hajimini A. Electrical Funnel: A Broadband Signal Combining Method. IEEE International Solid-State Circuits Conference, 2006, pp. 751–760.
- 15. Chen J., Niknejad A.M. Design and Analysis of a Stage-Scaled Distributed Power Amplifier. IEEE Transactions on Microwave Theory and Techniques, 2011, vol. 59, no. 5, pp. 1274–1283.
- 16. Zhang Y., Ma K. A 2–22 GHz CMOS Distributed Power Amplifier with Combined Artificial Transmission Lines. IEEE Microwave and Wireless Components Letters, 2017, vol. 27, no. 12, pp. 1122–1124.
- 17. Gao L., Ma Q., Rebeiz G.M. A 1–17 GHz Stacked Distributed Power Amplifier with 19–21 dBm Saturated Output Power in 45 nm CMOS SOI Technology. IEEE MTT-S International Microwave Symposium Digest, 2018, pp. 454–456.
- 18. Tarar M.M., Negra R. Design and Implementation of Wideband Stacked Distributed Power Amplifier in 0.13-μm CMOS Using Uniform Distributed Topology. IEEE Transactions on Microwave Theory and Techniques, 2017, vol. 65, no. 12, pp. 5212–5222.
- 19. Fang K., Buckwalter J.F. Efficient Linear Millimeter-Wave Distributed Transceivers in CMOS SOI. Transactions on Microwave Theory and Techniques, 2019, vol. 67, no. 1, pp. 295–307.
- 20. Kobayashi K.W., Denninghoff D., Miller D. A Novel 100 MHz–45 GHz Input-Termination-Less Distributed Amplifier Design with Low-Drequency Low-Noise and High Linearity Implemented with A 6 Inch 0.15 μm GaN-SiC Wafer Process Technology. IEEE Journal of Solid-State Circuits, 2016, vol. 51, no. 9, pp. 2017–2026.
- 21. Heydari P. Design and Analysis of a Performance-Optimized CMOS UWB Distributed LNA. IEEE Journal of Solid-State Circuits, 2007, vol. 42, no. 9, pp. 1892–1905.
- 22. Distributed Amplification in CMOS. Available at: https://www.mos6581.org/files/Brecht_Machiels__Distributed_Amplification_in_CMOS.pdf (Accessed: May 15, 2023).
- 23. Campbell C.A. Wideband Power Amplifier MMIC Utilizing GaN on SiC HEMT Technology. IEEE Journal of Solid-State Circuits, 2009, vol. 44, no. 10, pp. 2640–2647.
- 24. Banyamin B., Berwick M. The Gain Advantages of Four Cascaded Single Stage Distributed Amplifier Configurations. IEEE MTT-S International Microwave Symposium Digest, 2000, pp. 1325–1328.
- 25. Chirala M.K., Huynh C., Nguyen C., Guan X. Design of an Ultra-Small Distributed Low-Noise-Amplifier for Ultra-Wideband Applications. IEEE Proceedings of APSURSI, 2011, pp. 3361–3364.
- 26. Banyamin B.Y., Berwick M. Analysis of the Performance of Four-Cascaded Single-Stage Distributed Amplifiers. IEEE Transactions on Microwave Theory and Techniques, 2000, pp. 2657–2663.
- 27. Gogolev N.I., Salih A., Bragin D.S., Dmitriev V.D. Usiliteli s raspredelennym usileniem [Distributed Gain Amplifiers]. Problems of Advanced Micro- and Nanoelectronic Systems Development (MES), 2022, no. 4, pp. 155-162. (In Russ.).
- 28. Grebennikov A., Kumar N. Distributed Power Amplifiers for RF and Microwave Communications. Artech, 2015, 439 p.
- 29. Broadband Microwave Amplifiers in Deep Submicron CMOS Technology. Available at: https://macsphere.mcmaster.ca/bitstream/11375/13084/1/fulltext.pdf (Accessed: May 29, 2023).
- 30. Beibei Wang, Liu K.J.R. Advances in Cognitive Radio Networks: Asurvey. IEEE Journal of Selected Topics in Signal Processing, 2011, vol. 5, no. 1, pp. 5–23.
- 31. Dmitriev V., Korotaev V., Shishkin D. Ocenka Parametrov pHEMT SVCH Polevogo Tranzistora po Nelinejnym Kriteriyam [Evaluation of pHEMT Microwave Field Effect Transistor Parameters by Nonlinear Criteria]. Proceedings of TUSUR University, 2011, vol. 24, no. 2, pp. 46–50 (in Russ.).
- 32. Alekseev O.V. Usiliteli moshchnosti s raspredelennym usileniem [Distributed power amplifier]. Leningrad, Energiya Publ., 1968. 221 p. (in Russ.).
- 33. A 70-GHz Bandwidth and 9-dB Gain Travelling Wave Amplifier Using 0.15-um Gate InGaP/InGaAs HEMTs with Coplanar Transmission Line Technology. Available at: https://www.researchgate.net/publication/224691658_A_70GHz_Bandwidth_and_9dB_Gain_Travelling_Wave_Amplifier_Using_015mm_Gate_InGaPInGaAs_HEMTs_with_Coplanar_Transmission_Line_Technology (Accessed: June 9, 2023).
Last issue
-2026-1_%D0%BA%D0%BE%D0%BF%D0%B8%D1%8F.jpg)
Editorial office address
Executive Secretary of the Editor’s Office
Editor’s Office: 40 Lenina Prospect, Tomsk, 634050, Russia
Phone / Fax: + 7 (3822) 701-582
Viktor N. Maslennikov
Executive Secretary of the Editor’s Office
Editor’s Office: 40 Lenina Prospect, Tomsk, 634050, Russia
Phone / Fax: + 7 (3822) 51-21-21 / 51-43-02
Subscription for updates
