Doklady Tomskogo gosudarstvennogo universiteta sistem upravleniya i radioelektroniki / Archive / Issue of Journal № 3, Vol. 26, 2023 / Passive compensation of temperature instability of micro-wave diode power detectors

Passive compensation of temperature instability of micro-wave diode power detectors

DOI: 10.21293/1818-0442-2023-26-3-20-26

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Abstract: The article presents the results of a study of the temperature effect on the characteristics of low-barrier ZB-28 diodes with a cutoff frequency over 100 GHz and diode detectors of micro-wave signal power based on them. A method is proposed to compensate the temperature instability of detectors, implement-ed by including an additional reference diode in the diode detec-tor circuit. The main results presented of experimental studies for the developed detector with passive temperature compensa-tion are presented.

Keywords: diode power detector, low barrier diode, temperature testing, output voltage deviation, temperature stability

Funding: This study was supported by the Russian Foundation for Basic Research (RFBR) under research project No. 20-38-90196.

For citation:
Nechaev V. G., Zagorodniy A. S., Zabolotskiy A. M. Passive compensation of temperature instability of micro-wave diode power detectors. Doklady Tomskogo gosudarstvennogo universiteta sistem upravleniya i radioelektroniki, 2023, vol. 26, no. 3, pp. 20–26. DOI: 10.21293/1818-0442-2023-26-3-20-26

Authors and copyright holders:

Nechaev V. G. , Tomsk State University of Control Systems and Radioelectronics (Tomsk, Russia)
Zagorodniy A. S. , Tomsk State University of Control Systems and Radioelectronics (Tomsk, Russia)
Zabolotskiy A. M. , Tomsk State University of Control Systems and Radioelectronics (Tomsk, Russia)

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