Dispersion of charge carriers in extrinsic-defective semiconductors with simultaneous usage of flash and electric field

Authors: Davydov V. N., Grebennikov A. S., Egorova I. A.

Annotation: We constructed the energetic diagram of n-CdSe photo-conductor, which takes into account extrinsic-defective states in the energy gap of a semiconductor. Thus there are received analytic expressions for charge carrier dispersion. They stick to band-edge tailing, which show exponential grow of dispersion of electrons and gaps when quasi-Fermi levels approach the energy gaps together with the growth of bias potential and backlight capacity. Dispersion of charge carriers has its maximum close to the center of an energy gap. The minimum level of nose voltage in n-CdSe photo-conductor is defined by photo-induced changes in the parameters of the mentioned electron states when capturing the nonequilibrium carrier.

Keywords: cadmium selenide, energetic diagram, minimum of noise level, band-edge tailing, recombinationgeneration states, dispersion of electron and gaps