Abstract: The designing results of discrete devices and some monolithic integrated circuits for microwave modules, including pin-diodes, HEMT transistors, switches and limiters, are presented.
Keywords: high electron mobility transistor, pin-diode, monolithic integrated circuit, limiter, switch
Authors and copyright holders:
—
For citation:
Yuschenko A. Yu., Ayzenshtat G. I., Bozhkov V. G., Monastyrev E. A. The basic devices development for microwave modules. Doklady Tomskogo gosudarstvennogo universiteta sistem upravleniya i radioelektroniki, 2010, no. 2(22), – p. 1. pp. 62–66.
Last issue
-2025-1.jpg)
Editorial office address
Executive Secretary of the Editor’s Office
Editor’s Office: 40 Lenina Prospect, Tomsk, 634050, Russia
Phone / Fax: + 7 (3822) 701-582
Viktor N. Maslennikov
Executive Secretary of the Editor’s Office
Editor’s Office: 40 Lenina Prospect, Tomsk, 634050, Russia
Phone / Fax: + 7 (3822) 51-21-21 / 51-43-02
Subscription for updates
