Abstract: The heterostructures based on large-gap material layers have been investigated. For the case of single and double nano-heterostructures, anomalous current-voltage characteristics have been found.
Keywords: silicon dioxide, silicon dioxide modified with carbon, heterostructures, current-voltage characteristics, coulomb staircase
For citation:
Kazimirov A. I., Saharov Yu. V., Troyan P. E. An investigation of heterostructures based on large-gap material layers. Doklady Tomskogo gosudarstvennogo universiteta sistem upravleniya i radioelektroniki, 2010, no. 2(22), – p. 1. pp. 201–203.
Authors and copyright holders:
- Kazimirov A. I.
- Saharov Yu. V.
- Troyan P. E. , Tomsk State University of Control Systems and Radioelectronics (Tomsk, Russia)
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