Review of circuit designs for high-speed VCSEL drivers based on integrated technologies

DOI: 10.21293/1818-0442-2026-29-1-82-91

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Abstract: Relevance. The development of telecommunication systems and data centers require higher bandwidth from fiber-optic networks, which makes the improvement of transceiver optical modules critically important. Purpose of the study is to analyze circuit design and technological solutions in the field of high-speed integrated circuits for vertical-cavity surface-emitting laser (VCSEL) diode drivers. Methods. Comparing integrated circuit parameters and synthesizing scientific publications on driver design. Novelty. The study systematizes the technological transition from A3-B5 compound semiconductors to silicon processes (CMOS and SiGe BiCMOS) and identifies specific design features for interfacing output stages with vertical-cavity surface-emitting lasers. Results. The work defines efficient cascode circuit configurations and proposes optimal approaches to driver design under import substitution. Practical significance. The paper reviews circuit designs for high-speed laser diode drivers implemented using modern integrated technologies. The formulated conclusions and recommendations can be directly used to create a competitive electronic component base for Russian high-speed fiber-optic communication lines.

Keywords: laser diode driver, microwave, IC, optical transmitter, fiber-optic communication lines, modulation

Funding: The work was carried out within the state assignment of the Ministry of Education and Science of Russia FEWM-2025-0004.

For citation:
Hodzhikov D. V., Koryakovtsev A. S., Kokolov A. A. Review of circuit designs for high-speed VCSEL drivers based on integrated technologies. Doklady Tomskogo gosudarstvennogo universiteta sistem upravleniya i radioelektroniki, 2026, vol. 29, no. 1, pp. 82–91. DOI: 10.21293/1818-0442-2026-29-1-82-91

Authors and copyright holders:

  • Hodzhikov D. V. , Tomsk State University of Control Systems and Radioelectronics (Tomsk, Russia)
  • Koryakovtsev A. S. , Tomsk State University of Control Systems and Radioelectronics (Tomsk, Russia)
  • Kokolov A. A. , Tomsk State University of Control Systems and Radioelectronics (Tomsk, Russia)

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