Schottky barrier diodes based on thermally resistant Ir-GaAs and Pt/Ir-GaAs contacts created by electrochemical deposition

Authors: Bozhkov V. G., Bekezina T. P., Burmistrova V. A.

Annotation: The article is devoted to the study of the thermal stability of Ir-GaAs and Pt/Ir-GaAs contacts obtained by electrochemical deposition using technology developed by the authors. The choice of metallization is due to a number of reasons, which are discussed in the paper. One of the most important ones is the increased thermal stability of contacts, that enables its use in power devices of semiconductor electronics in wide fre- quency range. The forward and reverse current – voltage (I – V) characteristics of the contacts in the range of diameters from 500 to 5 μm and their following parameters are studied: ideality factor n, measured and effective barrier heights Ф bm and Ф bI , reverse voltage. It has been shown that the covering of iridium with a thin layer of Pt increases its thermal stability. A peculiarity of the results is a higher thermal stability of contacts with a small diameter

Keywords: gallium arsenide, iridium, electrochemical deposi- tion, current-voltage characteristics, thermal stability, ideality factor, barrier height