Temperature dependence of radiation power and coloured temperature of semiconductor light source
DOI: 10.21293/1818-0442-2017-20-1-38-41
Abstract: The influence of the corps temperature of semiconductor light source on correlated coloured temperature of its radiation had been investigated. It is shown, that the main impact on temperature increasing is produced by temperature extinction of luminescence of phosphor coating.
Keywords: semiconductor light source, phosphor, correlated coloured temperature
For citation:
Korotkova K. V., Romanova M. A., Smirnov S. V. Temperature dependence of radiation power and coloured temperature of semiconductor light source. Doklady Tomskogo gosudarstvennogo universiteta sistem upravleniya i radioelektroniki, 2017, vol. 20, no. 1, pp. 38–41. DOI: 10.21293/1818-0442-2017-20-1-38-41
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