Abstract: In the research, we defined a set of complementary features, and implemented their chosen measuring methods, which are used to study the optical and electrical properties of semiconductor devices and structures. The choice of methodology is based on achieving wide frequency and dynamic ranges, high accuracy, and technical ease of implementation and the possibility of automation. The design and measurement capabilities of the developed automated system is described. Experimental studies of the capacitive properties of the InGaN/GaN heterostructures and the noise voltage of CdSe photores.
Keywords: automated complex, the method of capacitive divider, bridge method, method of through capacitor, amplitude-phase method, current-voltage characteristics, photoconductivity, noise voltage
Authors and copyright holders:
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For citation:
Davydov V. N., Novikov D. A. Measuring methods and automated system for investigation of opto– and nanoelectronic devices. Doklady Tomskogo gosudarstvennogo universiteta sistem upravleniya i radioelektroniki, 2015, no. 1(35), pp. 64–74.
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