Abstract: In the base of joint use formal approximations and results of analysis of physical processes, going in semiconductor material of MOSFET and GaAs FET analytical functions, describing collections of FET’s volt-ampere characteristic are received. In offereded functions mobility dependence of electrostatic intensity in silicon and arsenide gallium is taken into consideration.
Authors and copyright holders:
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For citation:
Tuev V. I. С arrier drift velocity saturation in approximations of FET’s volt-ampere characteristic. Doklady Tomskogo gosudarstvennogo universiteta sistem upravleniya i radioelektroniki, 2007, no. 1(15), pp. 51–56.
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