С arrier drift velocity saturation in approximations of FET’s volt-ampere characteristic

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Authors: Tuev V. I.

Annotation: In the base of joint use formal approximations and results of analysis of physical processes, going in semiconductor material of MOSFET and GaAs FET analytical functions, describing collections of FET’s volt-ampere characteristic are received. In offereded functions mobility dependence of electrostatic intensity in silicon and arsenide gallium is taken into consideration.