Synthesis of a dielectric film on a silicon surface in plasma of a non-self-sustained glow discharge with the hollow cathode

Abstract: The results of synthesis of a dielectric film on a silicon surface in the plasma formed by non-self-glow discharge with hollow cathode in the atmosphere of nitrogen and argon at pressure of 14–16 Pa are shown in this article. The current density through dielectric film was not exceeded 0,6 мА/см2, and by its temperature of 150 Celsius degree. It is shown that the continuous defect-free silicon oxynitride film is formed with a growth rate of 65–67 nm/min on the surface of the silicon.

Keywords: dielectric films, the silicon, the non-self-glow discharge with hollow cathode

For citation:
Burachevskiy Yu. A., Zolotuhin D. B. Synthesis of a dielectric film on a silicon surface in plasma of a non-self-sustained glow discharge with the hollow cathode. Doklady Tomskogo gosudarstvennogo universiteta sistem upravleniya i radioelektroniki, 2012, no. 1(25), – p. 1. pp. 40–46.