Abstract: MBE growth of CaF₂ layers on Si (100) has been studied by various growth techniques. Influence of solid-phase epitaxy (SPE) on the surface morphology of the CaF₂ films on Si (100) surface having microroughnesses about 3 nm was studied. To obtain as much as possible smooth surface of CaF₂ films the multistage solid-phase epitaxy method is offered. It is supposed that SPE is the most comprehensible method to overcome thermodynamic limitation due to sharp anisotropy of surface free energy of substrate and film.
Keywords: mbe, afm, calcium fluoride, silicon surface morphology, solid-phase epitaxy
For citation:
Velichko A. A., Ilyushin V. A., Filimonova N. I. Growth of CaF₂/Si (100) structures by solid-phase epitaxy method. Doklady Tomskogo gosudarstvennogo universiteta sistem upravleniya i radioelektroniki, 2012, no. 1(25), – p. 1. pp. 47–51.
Authors and copyright holders:
—
Last issue
-2026-1_%D0%BA%D0%BE%D0%BF%D0%B8%D1%8F.jpg)
Editorial office address
Executive Secretary of the Editor’s Office
Editor’s Office: 40 Lenina Prospect, Tomsk, 634050, Russia
Phone / Fax: + 7 (3822) 701-582
Viktor N. Maslennikov
Executive Secretary of the Editor’s Office
Editor’s Office: 40 Lenina Prospect, Tomsk, 634050, Russia
Phone / Fax: + 7 (3822) 51-21-21 / 51-43-02
Subscription for updates
