Stabilization of a bipolar transistor regime. Part 2. Bringing standard%circuits characteristics to the collector-emitter gap in order to calculate the allowed regime variation

Abstract: There have been derived the allowed variations of a bipolar transistor regime if the transistor works in standard-circuits and in case of a large signal. The relations connect the allowed variations with the transistor parameters, its initial regime and the parameters of the circuit passive elements. The results were received for harmonic signals but can also be used to analyze other kinds of signals and other circuits.

For citation:
Kolesov I. A., Melihov S. V. Stabilization of a bipolar transistor regime. Part 2. Bringing standard%circuits characteristics to the collector-emitter gap in order to calculate the allowed regime variation. Doklady Tomskogo gosudarstvennogo universiteta sistem upravleniya i radioelektroniki, 2009, no. 1(19), – p. 1. pp. 44–52.