Stabilization of a bipolar transistor regime. Part 2. Bringing standard%circuits characteristics to the collector-emitter gap in order to calculate the allowed regime variation

Download article in PDF format

Authors: Kolesov I. A., Melihov S. V.

Annotation: There have been derived the allowed variations of a bipolar transistor regime if the transistor works in standard-circuits and in case of a large signal. The relations connect the allowed variations with the transistor parameters, its initial regime and the parameters of the circuit passive elements. The results were received for harmonic signals but can also be used to analyze other kinds of signals and other circuits.

Editorial office address

Executive Secretary of the Editor’s Office

 Editor’s Office: 40 Lenina Prospect, Tomsk, 634050, Russia

  Phone / Fax: + 7 (3822) 701-582

  journal@tusur.ru

 

Viktor N. Maslennikov

Executive Secretary of the Editor’s Office

 Editor’s Office: 40 Lenina Prospect, Tomsk, 634050, Russia

  Phone / Fax: + 7 (3822) 51-21-21 / 51-43-02

  vnmas@tusur.ru

Subscription for updates