Abstract: The dependence of the electrical parameters of the microwave field – effect transistors with barrier (MESFET) from production engineering of GaAs monolithic integral circuits (MIC) are recognize. The influ ence of MESFET omic contact open area on the etching rate of gate region. This effect allow project FET MIC with different static characteristics into single die in common technological process.
Keywords: mesfet, gaas, the etching of gate region
For citation:
Petrova T. S. Influence of design and technological particular on electrical parameters of MESFET GaAs MIC. Doklady Tomskogo gosudarstvennogo universiteta sistem upravleniya i radioelektroniki, 2009, no. 1(19), – p. 1. pp. 53–57.
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