Proceedings of TUSUR University / Archive / Issue of Journal № 4, t. 28, 2025 / Phase Noise of a Ring Oscillator Based on an Yttrium Iron Garnet Delay Line

Phase Noise of a Ring Oscillator Based on an Yttrium Iron Garnet Delay Line

DOI: 10.21293/1818-0442-2025-28-4-7-12

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Abstract: Faced with the ever more demanding requirements for stability, phase noise and size of microwave sources, yttrium iron garnet oscillators offer unique advantages as the only type of devices that combine a high quality factor and continuous tuning across a broad band. The investigated structure employs a thin-film YIG (yttrium iron garnet) resonator mounted on a printed circuit board featuring an array of through-hole grounded vias. This configuration effectively suppresses parasitic radiation and improves impedance matching between the YIG film and the substrate. Surface magnetostatic waves (SMSWs) excited within this resonant cell exhibit minimal propagation losses and enable efficient coupling with microstrip excitation and reception structures. This implementation achieves high frequency stability and low insertion loss within a compact footprint, rendering the system suitable for precision radar and measurement applications. The fabricated and characterized oscillator demonstrates a phase noise of –100.16 dBc/Hz at a 100 kHz offset frequency. The development of novel devices based on shielded delay lines incorporating YIG films represents a timely and promising direction in modern microwave electronics.

Keywords: yttrium iron garnet, magnetostatic waves, yig oscillator, thin films, quality factor, substrate, shielding, spinwave delay line, computer simulation

Funding: This work was supported by grant No. 25-79-20053 from the Russian Science Foundation.

For citation:
Maksimov N. S., Safin A. R., Feoktistov A. D. Phase Noise of a Ring Oscillator Based on an Yttrium Iron Garnet Delay Line. Doklady Tomskogo gosudarstvennogo universiteta sistem upravleniya i radioelektroniki, 2025, vol. 28, no. 4, pp. 7–12. DOI: 10.21293/1818-0442-2025-28-4-7-12

Authors and copyright holders:

Maksimov N. S. , National Research University MPEI (Moscow, Russia)
Safin A. R. , Kotelnikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences (Moscow, Russia),, National Research University «MPEI» (Moscow, Russia)
Feoktistov A. D. , «Radiocomp» LLC (Moscow, Russia), National Research University MPEI (Moscow, Russia)

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