Visual design of Ku-band linear amplifier based on Russian 0.5 um GaAs-pHEMT-technology
DOI: 10.21293/1818-0442-2024-27-3-17-24
DOI: 10.21293/1818-0442-2024-27-3-17-24
Abstract: This paper examines the design of a monolithic integrated circuit (MIC) for a Ku-band low-noise microwave amplifier (LNA) using algorithms, methods, and software for the visual synthesis of active microwave devices. The LNA MIC is based on domestic 0.5 µm GaAs-pHEMT technology from Svetlana-Rost JSC.
Keywords: low-noise microwave amplifier, load-pull modelling, visual design, MIC, GaAs, pHEMT
Funding: This work was carried out with financial support from the Ministry of Education and Science of the Russian Federation (unique identifier FEWM-2023-0014).
For citation:
Cherkashin M. V. Visual design of Ku-band linear amplifier based on Russian 0.5 um GaAs-pHEMT-technology. Doklady Tomskogo gosudarstvennogo universiteta sistem upravleniya i radioelektroniki, 2024, vol. 27, no. 3, pp. 17–24. DOI: 10.21293/1818-0442-2024-27-3-17-24
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