Visual design of Ku-band linear amplifier based on Russian 0.5 um GaAs-pHEMT-technology

DOI: 10.21293/1818-0442-2024-27-3-17-24

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Abstract: This paper examines the design of a monolithic integrated circuit (MIC) for a Ku-band low-noise microwave amplifier (LNA) using algorithms, methods, and software for the visual synthesis of active microwave devices. The LNA MIC is based on domestic 0.5 µm GaAs-pHEMT technology from Svetlana-Rost JSC.

Keywords: low-noise microwave amplifier, load-pull modelling, visual design, MIC, GaAs, pHEMT

Funding: This work was carried out with financial support from the Ministry of Education and Science of the Russian Federation (unique identifier FEWM-2023-0014).

For citation:
Cherkashin M. V. Visual design of Ku-band linear amplifier based on Russian 0.5 um GaAs-pHEMT-technology. Doklady Tomskogo gosudarstvennogo universiteta sistem upravleniya i radioelektroniki, 2024, vol. 27, no. 3, pp. 17–24. DOI: 10.21293/1818-0442-2024-27-3-17-24

Authors and copyright holders:

  • Cherkashin M. V. , Tomsk State University of Control Systems and Radioelectronics (Tomsk, Russia)

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