Ultra-Wideband pin-diode diplexer switch on GaAs

DOI: 10.21293/1818-0442-2023-26-3-27-31

Download article in PDF format

JATS xml

Abstract: The article presents a circuit of an ultra-wideband pin-diode switch for two channels with different operating frequency ranges: DC-18 GHz and 18–26.5 GHz. A topology model of a microwave monolithic integrated circuit (MMIC) based on quasi-vertical GaAs pin diode technology of Micran JSC is described. Comparison of simulation results and experimental measurement data of manufactured MMICs is performed. The use of the integrated circuit of the switch is possible as a part of the switching nodes of the measuring microwave equipment.

Keywords: RF switch, multiplexer, ultra-wideband, diplexer, pin diode, monolithic integrated circuit, gallium arsenide

For citation:
Hmara I. V., Danilov D. S., Grebenyuk V. N., Zagorodniy A. S., Sharangovich S. N. Ultra-Wideband pin-diode diplexer switch on GaAs. Doklady Tomskogo gosudarstvennogo universiteta sistem upravleniya i radioelektroniki, 2023, vol. 26, no. 3, pp. 27–31. DOI: 10.21293/1818-0442-2023-26-3-27-31

Authors and copyright holders:

  • Hmara I. V. , Tomsk State University of Control Systems and Radioelectronics (Tomsk, Russia)
  • Danilov D. S. , Tomsk State University of Control Systems and Radioelectronics (Tomsk, Russia)
  • Grebenyuk V. N. , Micran JSC (Tomsk, Russia)
  • Zagorodniy A. S. , Tomsk State University of Control Systems and Radioelectronics (Tomsk, Russia)
  • Sharangovich S. N. , Tomsk State University of Control Systems and Radioelectronics (Tomsk, Russia)

  • 1. Dzekhtser G.B., Orlov O.S. p-i-n diody v shirokopolosnykh ustroistvakh SVCh [p-i-n diodes in broadband microwave devices]. Moscow, Sov. radio, 1970, 200 p. (in Russ.).
  • 2. Cameron R.J., Mansour R.R. Microwave Filters for Communication Systems. 2nd ed, Hoboken: Wiley & Sons, 2018, 929 p.
  • 3. Khachatryan L.Kh., Stepanyan A.G. Proektirovanie sverkhvysokochastotnogo dipleksera s vysokoi izolyatsiei vykhodnykh kanalov [Designing an ultrahigh frequency diplexer with high isolation of output channels]. Proceedings of NPUA, 2022, no. 1, pp. 106–113 (in Russ.).
  • 4. Ashiq I., Khanna A.P.S. Ultra-broadband contiguous planar DC-35–65 GHz diplexer using softboard suspended stripline technology. 2013 IEEE MTT-S International Microwave Symposium Digest (MTT), 2013, pp. 1–4. DOI: 10.1109/MWSYM.2013.6697689.
  • 5. Ashiq I. Khanna A. A novel ultra-broadband DC-36-to-66-GHz hybrid diplexer using waveguide and SSL technology. 2014 44th European Microwave Conference, 2014, pp. 1111–1114. DOI: 10.1109/EuMC.2014.6986634.
  • 6. Ashiq I., Khanna A.P.S. A novel planar contiguous diplexer DC-67-100 GHz using Organic Liquid Crystal Polymer (LCP) 2015 IEEE MTT-S International Microwave Symposium, 2015, pp. 1–4. DOI: 10.1109/MWSYM.2015.7167091.
  • 7. Chuang M.-L., Wu M.-T. Microstrip multiplexer and switchable diplexer with joint T-shaped resonators IEEE Microwave and Wireless Components Letters, 2014, pp. 309–311. DOI: 10.1109/LMWC.2014.2309084.
  • 8. Chen C.-F., Chen R.-Y., Zhou K.-W., He Y.-H. Microstrip switchable diplexer based on dual-mode stub-loaded stepped-impedance resonators with three operating states Electronics Letters, 2019, vol. 55, no. 22, pp. 1188–1190.
  • 9. Teng C., Ho S.-K., Tam K.-W., Choi W.-W. Switchable diplexer with high isolation using terminated T-shaped resonator for 5G communications In IEEE MTT-S International Wireless Symposium (IWS), 2019, pp. 1–3. DOI: 10.1109/IEE-IWS.2019.8804141.8.
  • 10. Xu J.-X., Zhan W.-L., Li H.-Y., Zhang X.6Y. Switchable diplexer based on coupling control IEEE Transactions on Circuits and Systems II: Express Briefs, 2021, pp. 166–170. DOI: 10.1109/TCSII.2020.3003913.
  • 11. Mizutani H., Takayama Y. DC–110-GHz MMIC Traveling-Wave Switch IEEE Transactions on Microwave Theory and Techniques, 2000, vol. 48, no. 5. pp. 840–845. DOI: 10.1109/22.841881.
  • 12. Yunusov I.V., Yushchenko A.M., Plotnikova A.Yu., Arykov V.S., Barov A.A. SVCh MIS na osnove GaAs-pin-diodov dlya upravleniya amplitudoi signala v diapazone chastot 4–27 GGts [MMIC based on GaAs-pin diodes for controlling the signal amplitude in the frequency range 4–27 GHz]. Proceedings of TUSUR University, 2014, no. 3, pp. 70–74 (in Russ.).
  • 13. Gushchin V.A., Yunusov I.V., Plotnikova A.Yu. Monolitnye integral'nye skhemy GaAs-pin-diodnykh kommutatorov SVCh [Monolithic integrated circuits of GaAs-pin-diode microwave switches]. Scientific and Technical Conference «Microwave microelectronics», St. Petersburg, 2012, pp. 93–96 (in Russ.).
  • 14. The pin diode circuit designer’s handbook. Microsemi-Corporation, 1998. p. Available at: https://www.ieee.li/pdf/essay/pin_diode_handbook.pdf (Accessed: June 12, 2023).
  • 15. Hiller G. Design with PIN Diodes: Application Note AG312. M/A-COM. 18 p. Available at: https://cdn.macom.com/applicationnotes/AG312.pdf (Accessed: June 16, 2023).
  • 16. Liu H.-E., Lin X, Chang H.-Y., Wang Y.-C. 10-MHz-to-70-GHz Ultra-Wideband Low-Insertion-Loss SPST and SPDT Switches Using GaAs-pin-Diode MMIC Process. 2018 Asia-Pacific Microwave Conference (APMC), 2018, pp. 1217–1219. DOI: 10.23919/APMC.2018.8617438.
  • 17. Khmara I.V., Grebenyuk V.N., Danilov D.S., Zagorodniy A.S., Sharangovich S.N. Skhemnoe reshenie dlya sverkhshirokopolosnykh pereklyuchaemykh GaAs pin-diodnykh diplekserov [Circuit solution for ultra-wideband switchable GaAs pin-diode diplexers] Scientific and Technical Conference «TUSUR Scientific Session», in 3 parts, part 1, Tomsk: TUSUR; V-Spectr, 2023, pp. 72–77 (in Russ.).
Editorial office address

Executive Secretary of the Editor’s Office

 Editor’s Office: 40 Lenina Prospect, Tomsk, 634050, Russia

  Phone / Fax: + 7 (3822) 701-582

  journal@tusur.ru

 

Viktor N. Maslennikov

Executive Secretary of the Editor’s Office

 Editor’s Office: 40 Lenina Prospect, Tomsk, 634050, Russia

  Phone / Fax: + 7 (3822) 51-21-21 / 51-43-02

Subscription for updates