Numerical solution of the Poisson equation in a silicon n-i-p-nanostructure taking into account surface states
DOI: 10.21293/1818-0442-2026-29-2-93-98
Abstract: Relevance. Recently, n-i-p-nanostructures have become quite widespread in modern electronic devices. Surface electron states influence the distribution of charge carriers within the bulk of the silicon n-i-p-nanostructure, with a diffusion distribution of donors and acceptors, thereby altering the properties of semiconductor devices. However, this effect has not been fully studied. Purpose of the study. Analysis of the influence of surface charge density on the distribution of electron and hole concentrations and their drift velocity in an n-i-p-nanostructure. Methods. To simulate the change in the concentration of charge carriers depending on the electric field potential, a numerical method for solving the Poisson equation was employed, taking surface states into account. Scientific novelty. Fundamentally new knowledge is obtained about the influence of surface states on the space-charge region of a silicon n-i-p-nanostructure. Results. It is shown that the surface states create a space-charge region in which both the difference in electric potential at the structure boundaries and the concentration of the majority charge carriers decrease. Therefore, the electrical conductivity of the surface region is lower than that in the doped layer. The drift velocity of thermally generated charge carriers reverses in the surface region. Reducing the density of surface states to 10^{16} m^{−2} virtually eliminates these effects. Practical significance. The obtained results can be used in semiconductor nanoelectronics to improve existing devices and develop new ones.
Keywords: n-i-p-nanostructure, electric field potential, surface states, electrons, holes, silicon, drift velocity
For citation:
Bogatov N. M., Volodin V. S., Grigoryan L. R., Kovalenko M. S. Numerical solution of the Poisson equation in a silicon n-i-p-nanostructure taking into account surface states. Doklady Tomskogo gosudarstvennogo universiteta sistem upravleniya i radioelektroniki, 2026, vol. 29, no. 2, pp. 93–98. DOI: 10.21293/1818-0442-2026-29-2-93-98
Authors and copyright holders:
- Bogatov N. M. , Kuban State University
- Volodin V. S. , Kuban State University
- Grigoryan L. R. , Kuban State University
- Kovalenko M. S. , Kuban State University
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