Abstract: As a result of research of noise properties of CdSe photo-resistors, it was discovered that when the background noise is of certain capacity, the minimum of noise appears depending on spectral density of noise voltage and bias voltage. Dependences of the parameters of obtained noise minimum on background noise capacity are investigated. It is assumed that the possible reason of its occurrence is photostructural transformations in the semiconductor due to capture of nonequilibrium holes.
Keywords: сadmium selene, background noise, noise minimum, generation-recombination noise, flicker-noise, position density tails
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For citation:
Davydov V. N., Musina I. M., Grebennikov A. S. Influence of the background noise on electrical properties of CdSe photo-resistors. Doklady Tomskogo gosudarstvennogo universiteta sistem upravleniya i radioelektroniki, 2011, no. 2(24), – p. 1. pp. 166–170.
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